Abstract: The melting behavior of Ge nanocrystals embedded within SiO₂ is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2, Xu, Q., Sharp I. D., Yuan C. W., Yi D. O., Liao C. Y., Glaeser A. M., Minor A. M., Beeman J. W., Ridgway M. C., Kluth P., et al. , Physical Review Letters, Volume 97, Number 15, p.155701, (2006)

On the Spectrum of Elementary Silicon, Crookes, William , Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character (1905-1934), 8/1914, Volume 90, Issue 621, p.512 - 520, (2006)

Elastically relaxed free-standing strained-silicon nanomembranes, Roberts, Michelle M., Klein Levente J., Savage Donald E., Slinker Keith A., Friesen Mark, Celler George, Eriksson Mark A., and Lagally Max G. , Nature Materials, 5/2006, Volume 5, Issue 5, p.388 - 393, (2006)