Abstract: The melting behavior of Ge nanocrystals embedded within SiO₂ is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2, Xu, Q., Sharp I. D., Yuan C. W., Yi D. O., Liao C. Y., Glaeser A. M., Minor A. M., Beeman J. W., Ridgway M. C., Kluth P., et al. , Physical Review Letters, Volume 97, Number 15, p.155701, (2006)