Chemistry Nexus

by WebElements: the periodic table on the web

Abstract:
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.1

References

1. Xu, Q., I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, et al., “Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in  SiO2“, Phys. Rev. Lett., 2006, 97, 155701. http://dx.doi.org/10.1103/PhysRevLett.97.155701.

December 15th, 2009

Posted In: Chemistry, Materials chemistry

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