Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2

TitleLarge Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2
Publication TypeJournal Article
Year of Publication2006
AuthorsXu, Q., Sharp I. D., Yuan C. W., Yi D. O., Liao C. Y., Glaeser A. M., Minor A. M., Beeman J. W., Ridgway M. C., Kluth P., III Ager J. W., Chrzan D. C., and Haller E. E.
JournalPhysical Review Letters
Volume97
Pagination155701
KeywordsAnalytical chemistry, Germanium, Physical chemistry, Silicon
URLhttp://link.aps.org/abstract/PRL/v97/e155701
DOI10.1103/PhysRevLett.97.155701
Citation Keyxu:155701
Full Text

Abstract: The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

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