Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2
| Title | Large Melting-Point Hysteresis of Ge Nanocrystals Embedded in SiO2 |
| Publication Type | Journal Article |
| Year of Publication | 2006 |
| Authors | Xu, Q., Sharp I. D., Yuan C. W., Yi D. O., Liao C. Y., Glaeser A. M., Minor A. M., Beeman J. W., Ridgway M. C., Kluth P., III Ager J. W., Chrzan D. C., and Haller E. E. |
| Journal | Physical Review Letters |
| Volume | 97 |
| Pagination | 155701 |
| Keywords | Analytical chemistry, Germanium, Physical chemistry, Silicon |
| URL | http://link.aps.org/abstract/PRL/v97/e155701 |
| DOI | 10.1103/PhysRevLett.97.155701 |
| Citation Key | xu:155701 |
| Full Text | Abstract: The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy. |
Bookmark/Search this post with
